Project Name :Creation of the dielectric state in the narrow band IV-VI semiconductors
Donor Organization :USTC (USA)
Budget:120 000$
Grant number :3641
Research Direction :6 Physical and Chemical Sciences/Natural Sciences
Sub Direction :6-160 Physics of Semiconductors and Dielectrics
Keyword(s) :semiconductor layers
Description :The major aim of the project - to develop important problem of the creation of the dielectric state -realization of effective "negative" pressure in layers grown on the substrates with higher lattice constants . Fabrication of the layers will be by molecular epitaxy with "hot" wall