Project Name :Elaboration of the doped by special impurities IV-VI semiconductors and creation on their base supercritical nanostructures
Donor Organization :National Aviation Academy of Azerbaijan
Budget:კონკრეტული კვლევის მხარდაჭერა
Grant number :12
Research Direction :6 Physical and Chemical Sciences/Natural Sciences
Sub Direction :6-160 Physics of Semiconductors and Dielectrics
Keyword(s) :processes of layers' growth and layer doping
Description :The aim of the project is tostudy of formation of the IV-VI layers in the wide range of their thickness . Concretelly , structure and morphology dependence of technological factors. It's planned to dope layers by impurities (for instance, Cr) for regulation of the concentration of current carriers . And than to fabricate on their base IR photodetectors , lasers , modulators